FUJITSU SEMICONDUCTOR INTRODUCTION SHEET
NP05-11449-2E
32 Mbit Mobile FCRAM 3.0 V, Page Mode MB82DP02183E-65L
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FEATURES
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Pseudo SRAM with Asynchronous SRAM Interface 8 Words Page Read Access Capability Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business
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MAIN SPECIFICATIONS
Part Number Organization Supply Voltage Page Address Access Time (Max.) Address Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep MB82DP02183E-65L 2 M Word × 16 bit 2.6 V to 3.1 V 20 ns 65 ns 30 mA 120 μA 10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1 Copyright©2007 FUJITSU LIMITED All rights reserved
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