Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC3507
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
15.0±0.3
5.0±0.2
(0.7)
■ Features
11.0±0.2
(3.2)
High-speed switching
21.0±0.5 15.0±0.2
High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one
screw
2.0±0.2
2.0±0.1
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.6±0.2
/ Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
e ) Collector-base voltage (Emitter open) VCBO
1 000
V
c type Collector-emitter voltage (E-B short) VCES
1 000
V
n d tage. ued Collector-emitter voltage (Base open) VCEO
800
V
le s ntin Emitter-base voltage (Collector open) VEBO
7
V
a e cyc isco Collector current
IC
5
A
n u t life ed, d Base current
IB
3
A
duc typ Peak collector current
ICP
10
A
te tin r Pro ued Collector power dissipation
PC
80
W
fou ontin Ta = 25°C
3.0
wing disc Junction temperature
Tj
150
°C
in n follo ned Storage temperature
Tstg −55 to +150 °C
a o includestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C
c ed ce Parameter
Symbol
Conditions
M is ntinu tenan Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.5 A, L = 50 mH
isco ain Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
e/D e, m Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
D nanc e typ Forward curre...
