SPI80N08S2-07R OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 75 7.3 80
P- TO262 -3-1
V...
SPI80N08S2-07R OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID 75 7.3 80
P- TO262 -3-1
V mΩ A
Enhancement mode 175°C operating temperature
www.DataSheet4U.com
Avalanche rated dv/dt rated Integrated gate resistance for easy parallel connection
Type SPI80N08S2-07R
Package P- TO262 -3-1
Ordering Code Q67060-S7417
Marking RN0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1)
TC=25°C
Symbol ID
Value 80 80
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 750 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=60V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPI80N08S2-07R
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.32 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1
Values typ. 3 m...
