Document
APM3011NU
N-Channel Enhancement Mode MOSFET
Features
•
30V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V
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Pin Description
G
D S
• • • •
Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
Top View of TO-252
(2) D1
Applications
•
Power Management in Desktop Computer or DC/DC Converters
S1 (3) (1) G1
N-Channel MOSFET
Ordering and Marking Information
A PM 3011N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube T R : T ape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e
A PM 3011N U :
A PM 3011N XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw
APM3011NU
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG
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Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating 30 ±20 150 -55 to 150 100 65 40 22 50 20 2.5
Unit
Common Ratings (TA=25°C Unless Otherwise Noted) V °C °C
Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case
2
A A W °C/W
Mounted on PCB of 1in pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 65 10 6 2.5 1 50 100 65 7 4 1.5 0.5 75 W °C/W W °C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
2
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APM3011NU
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
APM3011NU Min. Typ. Max.
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy
ID=20A, VDD=20V 30
100
mJ
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Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON)
a
V 1 30 µA V nA mΩ
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A , VGS=0V 9 13 1 1.5
2 ±100 11 17
Diode Characteristics a VSD Diode Forward Voltage
b IS b
0.9
1.3 20
V A
Diode continuous forward current TC=25°C 1560 345 245 10 VDD=15V, RL=15Ω, IDS=1A, VGEN=4.5V, RG=6Ω
b
Dynamic Characteristics Ciss Input Capacitance Coss Crss td(ON) Tr td(OFF) Tf Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VGS=0V, VDS=15V, Frequency=1.0MHz
pF
20 25 50 20 ns
15 35 15
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge
17.8 VDS=15V, VGS=4.5V, IDS=20A 4.6 10
24 nC
Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
3
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APM3011NU
Typical Characteristics
Power Dissipation
60 50
Drain Current
50
40
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40
ID - Drain Current (A)
0 20 40 60 80 100 120 140 160 180
Ptot - Power (W)
30
30
20
20
10
10
0
0
0
20
40
60
80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
300 100 2 1
Thermal Transient Impedance
ID - Drain Current (A)
it Lim n) o ( s Rd
Duty = 0.5 0.2
10ms 100ms
10
1s
0.1
0.05 0.02 0.01
0.1
DC
1
0.01
Single Pulse
0.1 0.1
Tc=25 C
o
1
10
70
1E-3 1E-4
Mounted on 1in pad o RθJA :50 C/W
2
1E-3
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
4
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APM3011NU
Typical Characteristics (Cont.)
Output Characteristics
40 VGS=5,6,7,8,9,10V 35 30 4V 24
Drain-Source On Resistance
RDS(ON) - On - Resistanc.