TSFF5510

TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. Features www.DataSheet4U.com Package type: leaded Dimensions: T-1¾ (∅ 5 mm) Peak wavelength: λp = 870 nm High reliability High radiant power 21061 e2 Applications Infrared video data transmission between camcorder and TV set Free air data transmission systems with high modulation frequencies or high data transmission High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Product Summary Component Symbol φe Ie TSFF5510 tr, tf ϕ λp Value 55 32 15 ± 38 870 Unit mW mW/sr ns deg nm Ordering Information Ordering code TSFF5510 Note: MOQ: minimum order quantity Packing Bulk Remarks MOQ: 4000 pcs, 4000 pcs/bulk Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 81835 Rev. 1.0, 07-Feb-08 t ≤ 5 s, 2 m...