IGBT MODULE
IGBT MODULE
CIRCUIT
H-Bridge 75A 1200V
OUTLINE DRAWING
PBMB75B12
1 14 13 3 26 25 20 19 5 32 31
2
8- fasten- tab No ...
Description
IGBT MODULE
CIRCUIT
H-Bridge 75A 1200V
OUTLINE DRAWING
PBMB75B12
1 14 13 3 26 25 20 19 5 32 31
2
8- fasten- tab No 110
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Dimension(mm)
Approximate Weight : 430g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PBMB75B12
1200 +/ - 20 75 150 400 -40 to +150 -40 to +125 2500 2
Unit
V V A W °C °C V Nm
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 8 ohm RG= 13 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 6300 0.25 0.40 0.25 0.80
Max.
2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.00
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 75 150
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=150A/µs
Min.
-
Max.
2.4 0.3
...
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