IXTP2N80

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 5 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Features Maximum lead temperature for soldering Ÿ International standard packages Ÿ Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Low package inductance (< 5 nH) - easy to drive and to protect Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 5.5 ±100 TJ = 125°C 25 500 6.2 V V nA µA µA Ω Applications VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Ÿ Switch-mode and resonant-mode power supplies Ÿ Flyback inverters Ÿ DC choppers Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Ÿ Space savings Ÿ High power density IXYS reserves ...