LMBTA93LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon FEATURE ƽHigh voltage. ƽFor Telephony or Professional communication equipment applications. LMBTA92LT1 LMBTA93LT1 3 1 www.DataSheet4U.com ƽNPN complement: LMBTA42LT1,LMBTA43LT1. ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LMBTA92LT1 LMBTA92LT1G LMBTA93LT1 LMBTA93LT1G Marking 2D 2D (Pb-Free) 2E 2E (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 2 SOT–23 3 COLLECTOR MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO Value LMBTA92 LMBTA93 –300 –300 –5.0 –500 –200 –200 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RθJA PD Symbol PD Max 225 1.8 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. LMBTA92_93LT1-1/4 LESHAN RADIO COMPANY, LTD. LMBTA92LT1 LMBTA93LT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emit...