LMBT6520LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistor 3 COLLECTOR LMBT6520LT1 3 1 2 1 BASE 2 EMITTER DataSheet4U.com MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol V CEO V CBO V EBO IB IC Value –350 –350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc SOT–23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING LMBT6520LT1 = 2Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mA ) Collector–Base Breakdown Voltage(I E = –100 µA ) Emitter–Base Breakdown Voltage(I E = –10 µA) Collector Cutoff Current( V CB = –250V ) Emitter Cutoff Current( V EB = –4.0V ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO –350 –350 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nA nA LMBT6520–1/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 30 30 20 15 VCE(sat) —...