LMBT6517LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistors www.DataSheet4U.com 3 COLLECTOR LMBT6517LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol V CEO V CBO V EBO Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc SOT–23 IB IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING LMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO 350 350 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc I CBO I EBO LMBT6517–1/6 LESHAN RADIO COMPANY, LTD. LMBT6517LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 30 30 ...