LMBT4403LT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 LMBT4403LT1 www.DataSheet4U.com Device ORDERING INFORMATION Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel 1 2 LMBT4403LT1 LMBT4403LT1G SOT–23 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 40 – 40 – 5.0 – 600 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR –5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER R θJA T J , T stg DEVICE MARKING LMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol V (BR)CEO – 40 V (BR)CBO – 40 V (BR)EBO – 5.0 I BEV — I CEX — – 0.1 – 0.1 µAdc — µAdc — Vdc — Vdc Min Max Unit Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –3...