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LMBT3946DW1T1 Dataheets PDF



Part Number LMBT3946DW1T1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Transistors
Datasheet LMBT3946DW1T1 DatasheetLMBT3946DW1T1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), < 0.4 V • Simplifies Circuit Design • Reduces Board .

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), < 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3946DW1T1 = 46 Symbol V CEO Value 40 -40 V CBO LMBT3946DW1T1 6 5 4 www.DataSheet4U.com 1 2 3 SOT-363/SC-88 3 2 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base Voltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Electrostatic Discharge Unit Vdc Q1 Q2 4 5 6 Vdc 60 -40 LMBT3946DW1T1* *Q1 PNP Q2 NPN V EBO 6.0 -5.0 IC 200 -200 HBM>16000, MM>2000 Max 150 833 –55 to +150 Vdc ORDERING INFORMATION Device Package Shipping mAdc LMBT3946DW1T1 SOT-363 3000Units/Reel ESD V THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25°C Thermal Resistance Junction Rθ JA to Ambient Junction and Storage Temperature Range TJ,Ts t g Unit mW °C/W °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. LMBT3946DW1T1 1/11 LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage www.DataSheet4U.com (IC = 10 µAdc, IE = 0) (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) (IE = –10 µAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IIC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) (NPN) (PNP) (NPN) (PNP) VBE(sat) 0.65 – –0.65 – 0.85 0.95 –0.85 –0.95 (NPN) (PNP) (NPN) (PNP) ICEX – – 50 –50 (NPN) (PNP) IB L – – 50 –50 nAdc Min Max Unit V(BR)CEO (NPN) (PNP) V(BR)CBO (NPN) (PNP) V (BR)EBO 6.0 –5.0 – – 60 –40 – – 40 –40 – – Vdc Vdc Vdc nAdc hFE (NPN) 40 70 100 60 30 60 80 100 60 30 V CE(sat) – – – – 0.2 0.3 –0.25 –0.4 – – 300 – – – – 300 – – – (PNP) Vdc Vdc 2. Pulse Test: Pulse Width < 300 µs; Duty Cycle <2.0%. LMBT3946DW1T1 2/11 LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN) (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) (PNP) Output Capacitance www.DataSheet4U.com (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) (PNP) Small–Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) (PNP) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) (PNP) Noise Figure (VCE=5.0 Vdc,IC=100 µAdc, RS=1.0 kΩ, f=1.0kHz) (NPN) (VCE=–5.0 Vdc,IC=–100 µAdc, RS=1.0 kΩ, f=1.0kHz) (PNP) SWITCHING CHARACTERISTICS Delay Time Rise Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) (VCC = –3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = –10 mAdc, IB1 = –1.0 mAdc) Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc) Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = –1.0 mAdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) tf ts tr Min Max Unit fT 300 250 Cobo – – Cibo – – hie 1.0 2.0 hre 0.5 0.1 hFE 100 100 hoe 1.0 3.0 NF – – td 5.0 4.0 – – – – – – – – 35 35 35 35 200 225 50 75 40 60 400 400 8.0 10 10 12 8.0 10.0 4.0 4.5 – – MHz pF pF kΩ X 10–4 – µmhos dB ns ns LMBT3946DW1T1 3/11 LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1 TY.


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