LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon • Pb−Free Package May be Available. The G−Suffix Den...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
LMBT2222LT1 LMBT2222ALT1
3
1
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MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
2
2222 30 60 5.0 600
2222A 40 75 6.0 600
Unit Vdc Vdc Vdc mAdc
1 BASE 3 COLLECTOR
SOT– 23
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
2 EMITTER
RθJA PD
ORDERING INFORMATION
Device Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
RθJA TJ , Tstg
LMBT2222LT1
LMBT2222LT1G SOT–23 LMBT2222ALT1 SOT–23
DEVICE MARKING
LMBT2222LT1 = M1B; LMBT2222ALT1 = 1P
LMBT2222ALT1G SOT–23
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage LMBT2222 LMBT2222A LMBT2222 V V I
(BR)CBO
V
(BR)CEO
30 40 60 75 5.0 6.0 —
— –– — — –– 10
Vdc
Vdc Vdc nAdc µAdc
(I C = 10 µAdc, I E = 0) LMBT2222A Emitter–Base B...