HiPerFETTM Power MOSFETs Single DieMOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
IXFN 34N80
D
VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns
S
Symbol
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Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited...
