H9926CTS

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment 8 7 6 5 Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2 Features RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications H9926CTS Symbol & Pin Assignment 8 7 6 5 Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Applications Battery Protection Load Switch Power Management Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6 30 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance J...