PA1436AH

DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The µPA1436A is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed www.DataSheet4U.com for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES Easy mount by 0.1 inch of terminal interval. High hFE for Darlington Transistor. High Speed Switching. C-E Reverce Diode built in. 10 2.54 ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 1.4 0.6 ±0.2 1.4 0.5 ±0.2 µPA1436AH 1 2 3 4 5 6 7 8 910 CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2 1 4 6 8 10 3 5 7 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 ˚C) Total Power Dissipation (Tc = 25 ˚C) Junction Temperature Storage Temperature ** 4 Circuits Tj Tstg 150 –55 to +150 ˚C ˚C PT2** 28 W VCBO VEBO IC(DC) IC(pulse)* IB(DC) PT1** 150 100 8 ±3 ±5 0.3 3.5 V V V A/unit A/unit A/unit W (B) Collector to Emitter Voltage VCEO (C) R1 R2 (E) PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 5 kΩ R1 = .. 1.3 k...