Transistors
2SA1767
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1473A ■ Features
• ...
Transistors
2SA1767
Silicon
PNP epitaxial planar type
For general amplification Complementary to 2SC1473A ■ Features
High collector-emitter voltage (Base open) VCEO
0.7±0.1
0.7±0.2
Unit: mm
5.0±0.2
5.1±0.2
4.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
www.DataSheet4U.com Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −300 −300 −5 −70 −100 750 150 −55 to +150 Unit V V V
2.3±0.2
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
12.9±0.5
0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2
0.45+0.15 –0.1
mA mA mW °C °C
1: Emitter 2: Collector 3: Base TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO hFE VCE(sat) fT Cob Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −10 mA, IB = −1 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 50 7 Min −300 −5 30 150 − 0.6 Typ Max Unit V V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for
transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q 60 to 150
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