Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
HIRF740 Series Pin Assignment
Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Description
This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. www.DataSheet4U.com
2
3
1
Features
• Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
1
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3
2
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W
HIRF740 Series Symbol D G S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous)(VGS@10V, TC=25oC) Drain to Current (Continuous)(VGS@10V, TC=100 C) Drain to Current (Pulsed) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy*2 Avalanche Current
*1 *1 *1 o
Parameter
Value 400 10 6.3 40 ±20 74 38 0.59 0.3 520 10 13 4 -55 to 150 300
Units V A A A V W
Gate-to-Source Voltage (Continue)
PD
W/°C mJ A mJ V/ns °C °C
EAS IAR EAR dv/dt TJ,Tstg TL
Repetitive Avalanche Energy Peak Diode Recovery
*3
Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1.6mm from case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25Ω, IAS=10A *3: ISD≤10A, di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C HIRF740, HIRF740F HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol V(BR)DSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
o
Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 2/4
Min. 400 2
*4
Typ. 0.49 1400 330 120 14 27 50 24 4.5 7.5
Max. 25 250 100 -100 4 0.55 63 9 32 -
Unit V V/oC uA uA nA nA V Ω S pF
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25 C, ID=1mA) IDSS IGSSF www.DataSheet4U.com IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Drain-Source Leakage Current (VDS=400V, VGS=0V) Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=6A) Forward Transconductance (VDS=50V, ID=6A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Source Inductance (Measured from the drain lead 0.25” from package to source bond pad) (VDS=320V, ID=10A, VGS=10V)
*4 *4
5.8 -
VDS=25V, VGS=0V, f=1MHz
(VDD=200V, ID=10A, RG=9.1Ω, RD=20Ω)*4
-
ns
nC
nH nH
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol IS Characteristic Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)*1 Reverse Recovery Time Reverse Recovery Charge Diode Forward Voltage Forward Turn-On Time D MOSFET symbol showing the integral reverse PN junction diode G S 370 3.8 ** 40 790 8.2 2 A ns uC V Min. Typ. Max. Units 10 A
ISM trr Qrr VSD ton
IF=10A, di/dt=100A/us, TJ=25°C*4 IS=10A, VGS=0V, TJ=25°C (*4)
**: Negligible, Dominated by circuit inductance
HIRF740, HIRF740F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A D B E C F
Pb Free Mark
Pb-Free: " . " (Note) Normal: None H
Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 3/4
I RF
740 Date Code Control Code
www.DataSheet4U.com
I G Tab P L
H M 3 2 1 O J N K
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
DIM A B C D E F G H I J K L M N O P
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
*: Typical, Unit: mm
3-Lead TO-220AB Plastic Package HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α1
D
α4
E O C
Pb Free Mark
Pb-Free: " . " (Note) Normal: None H
I RF
740 Date Code Control Code
α2
α3
α5
I N 3
G
J
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn.