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HIRF740F Dataheets PDF



Part Number HIRF740F
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description N-Channel Power MOSFET
Datasheet HIRF740F DatasheetHIRF740F Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 HIRF740 / HIRF740F N-Channel Power MOSFET (400V, 10A) HIRF740 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. www.DataSheet4U.com 2 3 1 Fe.

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 HIRF740 / HIRF740F N-Channel Power MOSFET (400V, 10A) HIRF740 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. www.DataSheet4U.com 2 3 1 Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF740 Series Symbol D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous)(VGS@10V, TC=25oC) Drain to Current (Continuous)(VGS@10V, TC=100 C) Drain to Current (Pulsed) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy*2 Avalanche Current *1 *1 *1 o Parameter Value 400 10 6.3 40 ±20 74 38 0.59 0.3 520 10 13 4 -55 to 150 300 Units V A A A V W Gate-to-Source Voltage (Continue) PD W/°C mJ A mJ V/ns °C °C EAS IAR EAR dv/dt TJ,Tstg TL Repetitive Avalanche Energy Peak Diode Recovery *3 Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1.6mm from case for 10 seconds *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25Ω, IAS=10A *3: ISD≤10A, di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C HIRF740, HIRF740F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) o Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 2/4 Min. 400 2 *4 Typ. 0.49 1400 330 120 14 27 50 24 4.5 7.5 Max. 25 250 100 -100 4 0.55 63 9 32 - Unit V V/oC uA uA nA nA V Ω S pF ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25 C, ID=1mA) IDSS IGSSF www.DataSheet4U.com IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Drain-Source Leakage Current (VDS=400V, VGS=0V) Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=6A) Forward Transconductance (VDS=50V, ID=6A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Source Inductance (Measured from the drain lead 0.25” from package to source bond pad) (VDS=320V, ID=10A, VGS=10V) *4 *4 5.8 - VDS=25V, VGS=0V, f=1MHz (VDD=200V, ID=10A, RG=9.1Ω, RD=20Ω)*4 - ns nC nH nH *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% Source-Drain Diode Symbol IS Characteristic Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)*1 Reverse Recovery Time Reverse Recovery Charge Diode Forward Voltage Forward Turn-On Time D MOSFET symbol showing the integral reverse PN junction diode G S 370 3.8 ** 40 790 8.2 2 A ns uC V Min. Typ. Max. Units 10 A ISM trr Qrr VSD ton IF=10A, di/dt=100A/us, TJ=25°C*4 IS=10A, VGS=0V, TJ=25°C (*4) **: Negligible, Dominated by circuit inductance HIRF740, HIRF740F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 3/4 I RF 740 Date Code Control Code www.DataSheet4U.com I G Tab P L H M 3 2 1 O J N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α1 D α4 E O C Pb Free Mark Pb-Free: " . " (Note) Normal: None H I RF 740 Date Code Control Code α2 α3 α5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn.


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