HIRF740

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 HIRF740 / HIRF740F N-Channel Power MOSFET (400V, 10A) HIRF740 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. www.DataSheet4U.com 2 3 1 Features Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF740 Series Symbol D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous)(VGS@10V, TC=25oC) Drain to Current (Continuous)(VGS@10V, TC=100 C) Drain to Current (Pulsed) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy*2 Avalanche Current *1 *1 *1 o Parameter Value 400 10 6.3 40 ±20 74 38 0.59 0.3 520 10 13 4 -55 to 150 300 Units V A A A V W Gate-to-Source Voltage (Continue) PD W/°C mJ A mJ V/ns °C °C EAS IAR EAR dv/dt TJ,Tstg TL Repetitive Avalanche Energy Peak Diode Recove...