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S3PDB200

Sirectifier Semiconductors

Three Phase Rectifier Modules

S3PDB200 Three Phase Rectifier Modules _ + Type S3PDB200N08 S3PDB200N12 S3PDB200N14 S3PDB200N16 S3PDB200N18 VRSM V 900 1...


Sirectifier Semiconductors

S3PDB200

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Description
S3PDB200 Three Phase Rectifier Modules _ + Type S3PDB200N08 S3PDB200N12 S3PDB200N14 S3PDB200N16 S3PDB200N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 26 Dimensions in mm (1mm=0.0394") M6x10 ~ www.DataSheet4U.com ~ ~ 7 94 80 72 26 + – 15 54 27 6.5 A + B - ~~~ 12 25 66 Symbol Idav Idav Test Conditions TC=100oC, module TA=35oC (RthCA=0.2K/W), module TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 200 132 2240 2640 2000 2200 31360 36000 24960 25040 -40...+150 150 -40...+125 Unit A IFSM A It 2 A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s o C 2500 3000 _ 15% 5+ _ 15% 5+ 270 V~ Nm g Mounting torque (M6) Terminal connection torque (M6) typ. 6.5 C ~ D ~ E ~ 3 30 S3PDB200 Three Phase Rectifier Modules Symbol IR VF VTO www.DataSheet4U.com Test Conditions VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM per diode, 120 per module o o Characteristic Values _ 0.3 < _5 < _ 1.43 < 0.8 2.2 0.45 0.075 0.6 0.1 10 9.4 50 Unit mA V V m K/W K/W mm mm m/s2 rT RthJC RthJK dS dA a per diode, 130o per module Creeping distance on surface Creepage distance in air Max. allowable acceleration FEATURES * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Bloc...




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