K6T8008C2M

K6T8008C2M Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. - Change Icc: from 12 to 10mA - Change Icc1: from 10 to 12mA Draft Date June 22, 1999 February 29, 2000 Remark Advance Final www.DataSheet4U.com The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.00 February 2000 K6T8008C2M Family 1Mx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: TFT Organization: 1M x8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2.0V(Min) Three state output and TTL Compatible Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The K6T8008C2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family www.DataSheet4U.com K6T8008C2M-B K6T8008C2M-F Operating Temperature Commercial(0~70°C) Industrial(-40~85°C) Vcc...