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PJSMDA05C-7 Dataheets PDF



Part Number PJSMDA05C-7
Manufacturers Pan Jit International
Logo Pan Jit International
Description BI-DIRECTIONAL 7-TVS ARRAY
Datasheet PJSMDA05C-7 DatasheetPJSMDA05C-7 Datasheet (PDF)

PJSMDA05C-7 SERIES BI-DIRECTIONAL 7-TVS ARRAY This 7 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 7 data lines where the board space is a premium. 8 7 6 5 SPECIFICATION FEATURES 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage IEC61000-.

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PJSMDA05C-7 SERIES BI-DIRECTIONAL 7-TVS ARRAY This 7 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 7 data lines where the board space is a premium. 8 7 6 5 SPECIFICATION FEATURES 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance www.DataSheet4U.com Packaged in the Industry Standard SOIC-8 100% Tin Matte Finish (RoHS Compliant) 5 1 2 3 4 APPLICATIONS RS-232C or RS-422 Communication ports GPIB/IEEE 485 Ports Portable Instrumentation Video Signal Ports 8 4 1 SOIC-8 MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W kV °C °C ELECTRICAL CHARACTERISTICS Tj = 25°C PJSMDA05C-7 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj Cj I BR = 1mA VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins 5 Vdc Bias f = 1MHz Between I/O pins Conditions Min Typical Max 5 Units V V 6 5 9.5 13 100 60 µA V V pF pF 4/3/2006 Page 1 www.panjit.com PJSMDA05C-7 SERIES ELECTRICAL CHARACTERISTICS Tj = 25°C PJSMDA12C-7 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µs) www.DataSheet4U.com Clamping Voltage (8x20µs) Symbol VWRM VBR IR Vc Vc Cj Conditions Min Typical Max 12 Units V V I BR = 1mA VR = 12V I pp = 5A I pp = 15A 0 Vdc Bias f = 1MHz Between I/O pins 13.3 5 17 21 50 µA V V pF Off State Junction Capacitance PJSMDA15C-7 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µs) Clamping Voltage (8x20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 15V I pp = 5A I pp = 12A 0 Vdc Bias f = 1MHz Between I/O pins Conditions Min Typical Max 15 Units V V 16.7 5 22 27 40 µA V V pF PJSMDA24C-7 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µs) Clamping Voltage (8x20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 24V I pp = 5A I pp = 8A 0 Vdc Bias f = 1MHz Between I/O pins Conditions Min Typical Max 24 Units V V 26.7 5 35 40 30 µA V V pF 4/3/2006 Page 2 www.panjit.com PJSMDA05C-7 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition N on-R epetitive Peak Pulse Power vs Pulse Time Pulse Waveform Peak Pulse Power - Ppp (W) 110 100 90 80 70 60 www.DataSheet4U.com 50 40 30 20 10 0 Percent of Ipp 0 1000 100.


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