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CY9C6264

Part Number	CY9C6264
Manufacturer	Cypress Semiconductor
Description	8K X 8 Magnetic Nonvolatile CMOS RAM
Published	Jun 30, 2008
Detailed Description	PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form-, fit-, and function-compatible with 8K...
Datasheet	CY9C6264 PDF File

Overview

PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.
5V–5.
5V operation — Low active power: 495 mW (max.
) com — Low standby power, CMOS: 825 µW (max.
) Description The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process.
An MRAM is nonvolatile memory that operates as a RAM.
It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM.
Its fast ...

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