IR370BG12DCB

Bulletin I0201J rev. A 02/97 IR370BG12DCB PHASE CONTROL THYRISTORS www.DataSheet4U.com Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 370 mils 4" 1200 V Glassivated MESA Reference IR Packaged Part: IRKT56 Series Major Ratings and Characteristics Parameters V TM V RRM I GT V GT IH IL Maximum On-state Voltage Reverse Breakdown Voltage Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current Units 1.2 V 1200 V 150 mA 2V 5 to 200 mA 400 mA Test Conditions T J = 25°C, I T = 25 A T J = 25°C, IRRM = 100 µA (1) TJ = 25° C, anode supply = 6 V, resistive load TJ = 25° C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 µm) 370 x 370 mils (see drawing) 100 mm, with std. <110> flat 370 µm ± 10 µm 130 µm 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR370BG12DCB Bulletin I0201J rev. A 02/97 Ordering Information Table www.DataSheet4U.com Device Code IR 1 370 2 B 3 G 4 12 5 D 6 CB 7 1 2 3 4 5 6 7 - International R...