2N5581

2N5581 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N5581J) www.DataSheet4U.com Applications General purpose switching Low power NPN silicon transistor JANTX level (2N5581JX) JANTXV level (2N5581JV) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV Radiation testing (total dose) upon request Features Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/423 Benefits Qualification Levels: JAN, JANTX, and JANTXV Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO IC PT PT TJ TSTG TC = 25°C unless otherwise specified Rating 50 75 800 500 2.86 2 11.43 -55 to+200 -55 to+200 Unit Volts Volts mA mW mW/°C W mW/°C °C °C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5581 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C...