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K1835

2SK1835

Description

2SK1835 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maxi...

Hitachi Semiconductor

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