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STY80NM60N

Part Number	STY80NM60N
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Jun 26, 2008
Detailed Description	STY80NM60N N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET Preliminary Data Features w...
Datasheet	STY80NM60N PDF File

Overview

STY80NM60N N-channel 600 V - 0.
035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET Preliminary Data Features www.
DataSheet4U.
com Type VDSS 600 V RDS(on) < 0.
040 Ω ID 80 A Pw 560 W STY80NM60N ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247 1 2 3 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Figure 1.
Internal sche...

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STY80NM60N N-channel Power MOSFET - STMicroelectronics

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