20V N-Channel Enhancement Mode MOSFET
TSM2302
20V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
...
Description
TSM2302
20V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 4.5V VGS = 2.5V
Qg
20 65 95 5.4
Unit V mΩ
nC
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2302CX RF
SOT-23
3kpcs / 7” Reel
TSM2302CX RFG SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1) Continuous Source Current (Diode Conduction) (Note 2)
Maximum Power Dissipation
Ta = 25°C Ta = 75°C
VDS VGS ID IDM IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance Parameter
Symbol
Thermal Resistance Junction to Foot Thermal Resistance Junction to Ambient
RӨJF RӨJA
Limit 20 ±8 2.8 8 1.6 1.25 0.8
-55 to +150
Limit 75 145
Unit V V A A A
W
°C
Unit °C/W °C/W
1/6 Version: C15
TSM2302
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Static(Note 3)
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
Dr...
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