20V P-Channel Enhancement Mode MOSFET
TSM2311
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ - ...
Description
TSM2311
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ
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Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2311CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o
Symbol
VDS VGS ID IDM PD
Limit
- 20V ±8 -4 - 20 1.25 0.8 +150 - 55 to +150
Unit
V V A A W
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rθja
Limit
5 100
Unit
S
o
C/W
TSM2311
1-1
2003/12 rev. B
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State
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Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -4.0A VGS = - 2.5V, ID = -2.5A VDS = VGS, ID = - 250uA VDS = - 16V, VGS = 0V VGS = ± 8V, VDS = 0V VDS ≧- 10V, VGS = -4.5V VDS = - 5V, ID = ...
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