TSM2312

TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V Qg 20 33 40 51 11 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM2312CX RF SOT-23 3kpcs / 7” Reel TSM2312CX RFG SOT-23 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Continuous Source Current (Diode Conduction) (Note 2) Maximum Power Dissipation Ta = 25°C Ta = 75°C VDS VGS ID IDM IS PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Performance Parameter Symbol Thermal Resistance Junction to Foot Thermal Resistance Junction to Ambient RӨJF RӨJA Limit 20 ±8 4.9 15 1.0 0.75 0.48 -55 to +150 Limit 75 140 Unit V V A A A W °C Unit °C/W °C/W 1/6 Version: D15 TSM2312 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Static(Note 3) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drai...