TSM25N03

TSM25N03 25V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 14 @ VGS = 10V 19 @ VGS = 4.5V TO-252 Pin Definition: 1. Gate 2. Drain 3. Source ID (A) 25 25 www.DataSheet4U.com Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM25N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) a,b Symbol VDS VGS ID IDM IS EAS o o Limit 25 ±20 25 100 20 45 60 23 +150 -55 to +150 Unit V V A A A mJ W o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 70 C PD TJ TJ, TSTG C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. Symbol TL RӨJC RӨJA Limit 10 1.8 40 Unit S o o C/W C/W 1/6 Version: A07 TSM25N03 25V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static D...