DatasheetsPDF.com

TSM2831 Dataheets PDF



Part Number TSM2831
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet TSM2831 DatasheetTSM2831 Datasheet (PDF)

TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximu.

  TSM2831   TSM2831


Document
TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 20V ±8 - 2.8 - 10 1.5 1.0 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit 5 65 Unit S o C/W TSM2831 1-1 2003/12 rev. A Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance www.DataSheet4U.com Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -2.8A VGS = - 2.5V, ID = -1.5A VDS = VGS, ID = - 250uA VDS = - 16V, VGS = 0V VGS = ± 8V, VDS = 0V VDS ≧- 10V, VGS = -5V VDS = - 5V, ID = - 2.8A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs - 20 --- 0.45 ---6 -- -95 122 ----6.5 -120 180 -- 1.0 ± 100 --- V mΩ Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance V uA nA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.6A, VGS = 0V IS VSD ---- 0.8 - 1.6 - 1.2 A V VDS = - 6V, VGS = 0V, f = 1.0MHz VDD = - 6V, RL = 6Ω, ID = - 1A, VGEN = - 4.5V, RG = 6Ω VDS = - 6V, ID = - 2.8A, VGS = - 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------5.4 0.8 1.1 5 19 95 65 447 127 80 10 --25 60 110 80 ---pF nS nC Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2831 2-2 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) www.DataSheet4U.com TSM2831 3-3 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) www.DataSheet4U.com TSM2831 4-4 2003/12 rev. A SOT-89 Mechanical Drawing A B www.DataSheet4U.com I DIM A B C D E F J H G C SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 4.05 1.4 0.35 1.20 4.25 1.6 0.44 0.035 0.159 0.055 0.014 0.047 0.167 0.068 0.017 E D G H I J F TSM2831 5-5 2003/12 rev. A .


TSM2832 TSM2831 TSM25N03


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)