60V N-Channel Enhancement Mode MOSFET
TSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V
ID = 200mA
RDS (o...
Description
TSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
www.DataSheet4U.comThe TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package
Ordering Information
Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o o
Symbol
VDS VDGR VGS VGSM ID IDM PD
Limit
60 60 ± 20 ± 40 200 500 350 2.8 +150 - 55 to +150
Unit
V V V
mA mA mW mW/ oC
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8”...
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