EFA080A-70

Excelics DATA SHEET 180 Min. (All Leads) EFA080A-70 Low Distortion GaAs Power FET 44 19 4 www.DataSheet4U.com NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=5V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=5V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=5V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA -10 -6 MIN 21.5 6.0 TYP 23.5 23.5 7.0 4.5 30 130 90 210 120 -2.0 -15 -14 135* o MAX UNIT dBm dB % 300 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 8V 5V Vds Gate-Source Voltage -5V -4V Vgs Drain Current Idss 185mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 22dBm @ 3dB Compression Pin Channel Temperature 175oC 150 oC Tch Storage Temperature -65/175oC -65/150 oC Tstg Total Power Dissipation 1.1W 0.9W Pt Note: 1 Exceeding any of the above ...