N-Channel MOSFET
Wisdom Semiconductor
WFF740
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 0.55 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate ...
Description
Wisdom Semiconductor
WFF740
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 0.55 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C)
●
1. Gate {
▲
● ●
{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage
(
* Drain current limited by junction temperature)
Value
400 10* 6.3*
(Note 1)
Parameter
Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3)
Units
V A A A V mJ mJ V/ns W W/°C °C °C
40*
±25
450 13.4 5.5 44 0.35 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal...
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