SEMIX101GD128DS

SEMiX101GD128Ds SEMiX®13 SPT IGBT Modules SEMiX101GD128Ds Preliminary Data Features Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications AC inverter drives UPS Electronic welders up to 20 kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) IC = 50 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 2 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 50 A Tj = 125 °C RG on = 8 Ω RG off = 8 Ω per IGBT per IGBT GD © by SEMIKRON Rev. 9 – 02.12.2008 Values 1200 104 74 50 100 -20 ... 20 10 -40 ... 150 88 61 50 100 550 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.9 2.35 V 2.10 2.55 V 1 1.15 V 0.9 1.05 V 18.0 24.0 mΩ 24.0 30.0 mΩ 4.5 5 6....