Document
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
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Model : QL85H6S-A/B/C
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL85H6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.3 APR.2005
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♦OVERVIEW
QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for industrial optical module and sensor applications.
♦APPLICATION
- Sensor - Industrial Optical Module
♦FEATURES
- Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20mW CW TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
A B C
Pin Configuration
LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig. 3)
Fig. 1 QL85H6SA
Fig. 2 QL85H6SB
Fig. 3 QL85H6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse
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Symbols P V V Topr Tstg
Values 22 2 30 −10 ~ +60 −40 ~ +85
Unit mW V V °C °C
Voltage
Operating Temperature Storage Temperature
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence
Symbols
Po Ith Iop SE Vop
Min.
5 40 0.4 845 7 25 0.1 -
Typ. Max.
20 20 55 0.5 2.0 855 9 32 0.6 35 70 0.9 2.5 865 12 40 ±2 ±3 1.0 15 ±60
Unit
mW mA mA mW/mA V nm deg deg deg deg mA μm μm
Condition
Po=20mW 10~20 mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW
λp
θ ⎢⎢ θ⊥ Δθ ⎢⎢ Δθ ⊥
Im
Beam Angle Monitor Current Astigmatism Optical Distance
As ΔX, ΔY, ΔZ
NOTICE : QL85H6S-A/B/C to be operated on APC The above product specifications are subject to change without notice.
EXAMPLE of REPRESENTITIVE CHARACTERISTICS
Optical Pow er vs Forw ard Current 20
Output Power, P [mW]
15 10 5 0 0 10 20 30 40 50 60
F o r w a r d C u r r e n t , I f [mA ]
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25℃ 30℃ 40℃ 50℃ 60℃
Wavelength vs Temperature 890
Wavelength, λ [㎚]
880 870 860 850 840 20 30 40
T e mp e r a t u r e , T c [℃]
50
60
Far Field Pattern (Po=10mW, Tc=25℃) 1 0.8
Angle [degree]
0.6 0.4 0.2 0 -50
-40
-30
-20
-10
0
10
20
30
40
50
R e la tiv e In t e n s ity
M onitor Current vs Optical Pow er 0.6
Monitor Current, Im [mA]
0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20
O p t i c a l O u t p u t P o w e r , P o [mW ]
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Operating Voltage vs Temperature 1.9 1.85
Operating Voltage Vop [V]
1.8 1.75 1.7 1.65 1.6 20 30 40
T e mp e r a t u r e , T c [℃]
50
60
Threshold Current vs Temperature 100
Threshold Current Ith [mA]
10
1 25 30 35 40 45 50 55 60 Temperature, Tc [℃]
♦PACKAGE DIMENSION
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♦PACKING
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