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QL85H6S-A Dataheets PDF



Part Number QL85H6S-A
Manufacturers QSI
Logo QSI
Description Laser Diode
Datasheet QL85H6S-A DatasheetQL85H6S-A Datasheet (PDF)

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : www.DataSheet4U.com Model : QL85H6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85H6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.3 APR.2005 www.DataSheet4U.com ♦OVERVIEW QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractiv.

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : www.DataSheet4U.com Model : QL85H6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85H6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.3 APR.2005 www.DataSheet4U.com ♦OVERVIEW QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20mW CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View A B C Pin Configuration LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig. 3) Fig. 1 QL85H6SA Fig. 2 QL85H6SB Fig. 3 QL85H6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse www.DataSheet4U.com Symbols P V V Topr Tstg Values 22 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C Voltage Operating Temperature Storage Temperature ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Symbols Po Ith Iop SE Vop Min. 5 40 0.4 845 7 25 0.1 - Typ. Max. 20 20 55 0.5 2.0 855 9 32 0.6 35 70 0.9 2.5 865 12 40 ±2 ±3 1.0 15 ±60 Unit mW mA mA mW/mA V nm deg deg deg deg mA μm μm Condition Po=20mW 10~20 mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW λp θ ⎢⎢ θ⊥ Δθ ⎢⎢ Δθ ⊥ Im Beam Angle Monitor Current Astigmatism Optical Distance As ΔX, ΔY, ΔZ NOTICE : QL85H6S-A/B/C to be operated on APC The above product specifications are subject to change without notice. EXAMPLE of REPRESENTITIVE CHARACTERISTICS Optical Pow er vs Forw ard Current 20 Output Power, P [mW] 15 10 5 0 0 10 20 30 40 50 60 F o r w a r d C u r r e n t , I f [mA ] www.DataSheet4U.com 25℃ 30℃ 40℃ 50℃ 60℃ Wavelength vs Temperature 890 Wavelength, λ [㎚] 880 870 860 850 840 20 30 40 T e mp e r a t u r e , T c [℃] 50 60 Far Field Pattern (Po=10mW, Tc=25℃) 1 0.8 Angle [degree] 0.6 0.4 0.2 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 R e la tiv e In t e n s ity M onitor Current vs Optical Pow er 0.6 Monitor Current, Im [mA] 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20 O p t i c a l O u t p u t P o w e r , P o [mW ] www.DataSheet4U.com Operating Voltage vs Temperature 1.9 1.85 Operating Voltage Vop [V] 1.8 1.75 1.7 1.65 1.6 20 30 40 T e mp e r a t u r e , T c [℃] 50 60 Threshold Current vs Temperature 100 Threshold Current Ith [mA] 10 1 25 30 35 40 45 50 55 60 Temperature, Tc [℃] ♦PACKAGE DIMENSION www.DataSheet4U.com ♦PACKING www.DataSheet4U.com .


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