IXFN24N100F

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr D trr ≤ 250 ns G S S Symbol www.DataSheet4U.com V DSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 24 96 24 60 3.0 10 600 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B E153432 S G VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features l l 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 l l Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C 5.5 ± 200 V V nA l l l VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS ...