K2625LS

Ordering number : ENN7081 2SK2625LS N-Channel Silicon MOSFET 2SK2625LS Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2078C [2SK2625LS] 10.0 3.2 3.5 7.2 Low ON-resistance. Low Qg. www.DataSheet4U.com 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 600 ± 30 4 16 2.0 30 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=± 30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=15V Ratings min 600 1.0 ± 100 3.5 1.5 3.0 1.5 2.0 5.5 typ max Unit V mA nA V S Ω Marking : K2625 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure ca...