C5902

Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Base current IB 3 A a e cycle iscon Collector current IC 9 A life d, d Peak collector current * ICP 14 A n u duct type Collector power dissipation PC 40 W te tin Pro ed Ta=25°C 3 four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C in n follow ned d Note) *: Non-repetitive peak collector current 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Ma iscocontinueindteinncalnucdeestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Emitter-base voltage (Collector open) ten ce Forward voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation voltage VEBO VF ICBO...