JANTX2N3868S

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/350 Devices www.DataSheet4U.com 2N3867 Qualified Level 2N3868 2N3868S JAN JANTX JANTXV 2N3867S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 250C(1) @ TC = 250C(2) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT TOP, TSTG Symbol RθJC 2N3867 2N3867S 40 40 2N3868 2N3868S 60 60 Unit Vdc Vdc Vdc Adc W W 0 C Unit C/W 4.0 3.0 1.0 10 -55 to +200 Max. 17.5 TO-5* 2N3867, 2N3868 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C 0 TO-39* (TO-205AD) 2N3867S, 2N3868S *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc Collector-Emitter Breakdown Voltage IC = 20 mAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 40 Vdc VEB = 2.0 Vdc, VCE = 60 Vdc Collector-Base Cutoff Current VCB = 40 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 4 Vdc 2N3867, S 2N3868, S 2N3867, S 2N3868, S V(BR)CBO 40 60 40 60 4.0 1.0 1.0 100 100 Vdc V(BR)CEO V(BR)EBO Vdc Vdc µAdc 2N3867, S 2N3868, S 2N3867, S 2N3868, S ICEX ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1...