N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET
TYPE STB150NF55 STP150NF55 www.DataSheet4U.c...
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET
TYPE STB150NF55 STP150NF55 www.DataSheet4U.com STP150NF55
s s
STB150NF55 STP150NF55 STW150NF55
AUTOMOTIVE SPECIFIC
VDSS 55 V 55 V 55 V
RDS(on) <0.006 Ω <0.006 Ω <0.006 Ω
ID 120 A(**) 120 A(**) 120 A(**)
3 1
TYPICAL RDS(on) = 0.005 Ω SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE
D2PAK TO-263 (Suffix “T4”)
3 1 2
TO-247
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE STB150NF55T4 STP150NF55 STW150NF55 MARKING B150NF55 P150NF55 W150NF55 PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM() Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Tem...