SILICON BIDIRECTIONAL DIACS
DB3,DB4,DB6
SILICON BIDIRECTIONAL DIACS FEATURES
●Three way layer two terminal, axial lead ,
POWER DISSIPATION DO- 41
...
Description
DB3,DB4,DB6
SILICON BIDIRECTIONAL DIACS FEATURES
●Three way layer two terminal, axial lead ,
POWER DISSIPATION DO- 41
150 mW
DO-35(GLASS)
.020 TYP. (0.51) 1.083(27.5) MIN
hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts(DB3,DB4) or four volts(DB6).These diacs are intended for
www.DataSheet4U.com use in thyrisitors phase control.,circuits for lamp
1.0(25.4) MIN
.034(0.9) DIA .028(0.7)
dimming universal motor speed control and heat control
●This diocle is also avaiable in the DO-41case.
.205(5.2) MAX .107(2.7) DIA .080(2.0) 1.0(25.4) MIN
.150(3.8) MAX .079 MAX (2.0)
1.083(27.5) MIN
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS
PARAMETERS Power Dissipation on Printed Cir cuit(L=10mm) Repetitive Peak on-state Current TA=50℃ Tp=10uS f=100HZ TSTG/TJ -44 to+125/-40 to+110 ℃ ITRM 2.0 A SYMBOL DB3 Pc VALUE DB4 150 DB6 mW UNITS
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
PAPRAMETERS SYMBOLS TEST CONDITIONS DB3 Min Breakover Voltage* VBO C=22nf** See Diagram 1 Typ Max Breakover Voltage Symmetry 1+VBOI1-VBOI Dynamic Breakover Voltage Output Voltage* Breakover Current* Rise Time* Leakage Current* 1±△V1 VO IBO tr IB C=22nf** See Diagram 1 △I=(IBO to IF=10mA) Min See FIG 1 See FIG 2 C=22nf** See FIG 3 IB=0.5 VBO MAX See FIG 3 NOTE:* Electrical characteristics applicable in both forward and reverse directions. ** Connected in para...
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