5SDD54N4000

VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85×103 0.8 0.086 V A A A V mΩ Rectifier Diode 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 Patented free-floating silicon technology Very low on-state losses Optimum www.DataSheet4U.com power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C Value 3600 4000 Unit V V Non - repetitive peak reverse voltage VRSM Characteristic values Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 150°C min typ max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 90 kN, Ta = 25 °C min typ max 2.8 35.9 Unit kg mm mm mm 56 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 54N4000 On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M 50 Hz, Hal...