2SD1047P

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). www.DataSheet4U.com Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. Package Dimensions unit : mm 2022A [2SB817P / 2SD1047P] 15.6 14.0 2.6 3.2 3.5 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1.4 Specifications ( ) : 2SB817P Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 5.45 Ratings (−)160 (−)140 (−)6 (−)12 (−)15 120 150 −40 to +150 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as lif...