MT16VDDF6464H

512MB, 1GB (x64) 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM DIMM Features 200-pin, small-outline, dual in-line memory module (SODIMM) Fast data transfer rates: PC1600, PC2100, and PC2700 www.DataSheet4U.com Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components 512MB (64 Meg x 64), 1GB (128 Meg x 64) VDD = VDDQ = +2.5V VDDSPD = +2.3V to +3.6V 2.5V I/O (SSTL_2 compatible) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned with data for WRITEs Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture Differential clock inputs CK and CK# Four internal device banks for concurrent operation Programmable burst lengths: 2, 4, or 8 Auto precharge option Auto Refresh and Self Refresh Modes 7.8125µs maximum average periodic refresh interval Serial Presence Detect (SPD) with EEPROM Programmable READ CAS latency Gold edge contacts MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For the latest data sheet, please refer to the MicronâWeb site: www.micron.com/moduleds Figure 1: 200-Pin SODIMM (MO-224) 512MB Module 1GB Module OPTIONS MARKING G Package 200-pin SODIMM (standard) 200-pin SODIMM (lead-free)1 Frequency/CAS Latency2 167 MHz (333 MT/s) CL = 2.5 133 MHz (266 MT/s) CL = 2 133 MHz (266 MT/s) CL = 2 133 MHz (266 MT/s) CL = 2.5 100 MHz (200 MT/s) CL = 2 NOTE: ...