Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
12N035
Description
The Bay Linear n-channel pow...
Bay Linear
Inspire the Linear Power
N-Channel Field Effect
Transistor
12N035
Description
The Bay Linear n-channel power field effect
transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to
transistors are needed. www.DataSheet4U.com The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON)
VDSS = 30V RDS (ON) = 0.045 Ω ID = 12A Ordering Information
Device
12N035T 12N035S
Package
TO-220 TO-263 ( D2 )
Temp.
0 to 150°C 0 to 150°C
Absolute Maximum Rating
Symbol
ID
Parameter
Drain Current -Continues -Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range
Max
12 36 30 ±20 50 0.4 -65 to 175
Unit
A V V W W/°C °C
VDSS VGSV PD TJ TSTG
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
12N035
Electrical Chara...