Document
2SK2647-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
800V
4Ω
4A
40W
> Outline Drawing
> Applications
- Switching Regulators - UPS - DC-DC converters www.DataSheet4U.com - General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings T(
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 800 4 16 ±30 4 109 40 150 -55 ~ +150 Unit V A A V A mJ W °C °C
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg
- Electrical Characteristics (TC=25°C),
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
unless otherwise specified
Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=800V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=2A VGS =10V ID=2A VDS=25V VDS=25V VGS =0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Ω Tch =25°C L = 100µH IF=2xI DR VGS =0V T ch =25°C IF=IDR V GS =0V -dI F/dt=100A/µs T ch =25°C
Min. 800 3,5
Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3,0
Max. 4,5 500 1,0 100 4,0
3
Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 62,5 3,125
Unit °C/W °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
800V
4Ω
2SK2647-01MR
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=2A; VGS=10V
4A
40W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
↑
ID [A]
↑
RDS(ON) [Ω]
↑ 2
ID [A]
1
3
www.DataSheet4U.com
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
RDS(ON) [Ω]
↑
gfs [S]
↑ 5
VGS(th) [V]
4
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Avalanche Energy Derating
Eas=f(starting Tch); VCC=80V; IAV=4A
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
↑
C [F]
↑ 7
Eas [mJ]
↑ 8
IF [A]
9
VDS [V]
→
Starting Tch [°C]
→
VSD [V]
→
Allowable Power Dissipation vs. TC
PD=f(Tc)
Safe operation area
ID=f(VDS): D=0,01, Tc=25°C
↑
Zth(ch-c) [K/W]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
↑
PD [W]
10
↑
ID [A]
12
Tc [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!
.