2SK3842

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Pulse(t < = 1 ms) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 75 300 125 322 75 12.5 150 −55 to150 A Unit V V V W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual...