2N4398
MECHANICAL DATA Dimensions in mm (inches)
4 0 .0 1 (1 .5 7 5 ) M a x .
MEDIUM POWER PNP SWITCHING TRANSISTOR FOR SWITCHING APPLICATIONS
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2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls .
2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 (1 .1 7 7 ) 1 2 .1 9 (0 .4 8 ) 1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 ) 1 .5 2 (0 .0 6 0 )
FEATURES
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS
4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) 2 P ls
• SPACE QUALITY LEVELS OPTIONS • JAN LEVEL SCREENING OPTIONS
1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 )
1 6 .9 7 (0 .6 6 8 ) 1 6 .8 7 (0 .6 6 4 )
APPLICATIONS:
The 2N4398 is intended for use in power amplifier and switching circuits.
TO-3 (TO-204AA)
Underside View Pin 2 – Emitter Pin 3 – Collector
Pin 1 – Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC ICM IB PTOT Tj , Tstg Collector - Emitter Voltage (IB =0) Collector - Base Voltage (IE =0) Collector - Emitter Voltage (IC =0) Collector Current Collector Peak Current Base Current Total Power Dissipation @ Tcase < 25°C Maximum Junction And Storage Temperature 40V 40V 5V 30A 50A 7.5A 200W -65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
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Document Number 4089 Issue 1
2N4398
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
IEBO ICBO www.DataSheet4U.com ICEV ICEO VCEO(sus)* hFE* VCE(sat)* Emitter Cut-off Current Collector Cut-off Current Collector Cut-off Current (VBE=-1.5V) Collector Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage
Test Conditions
IC=0 IE=0 VCE=40V VCE=30V IB=0 IB=0 IC=15A IC=30A IC=10A IC=15A IC=20A IC=30A TC=150°C VCE=40V IC=200mA VCE=2V VCE=4V IB=1A IB=1.5A IB=2A IB=6A VEB=5V VEB=40V
Min.
Typ.
Max.
5 1 5 10 5
Unit
mA
40 15 5 0.75 1.0 2.0 4.0 1.7 1.8 2.5 1.7 3.0 4 40 1 2 1 0.875 60
V
VBE(sat)*
Base-Emitter Saturation Voltage
VBE* fT hfe tr ts tf RθJC
Base-Emitter Voltage Transition Frequency Small Signal Current Gain Rise Time Storage Time Fall Time Thermal Resistance Junction - Case
IC=10A IB=1.0A IB=1.5A IC=15A IB=2.0A IC=20A IC=15A VCE=2V VCE=4V IC=30A VCE=10V IC=1A f=1MHz VCE=10V IC=1A f=1KHz IC=10A VCC=30V IB1=-IB2=1A
V
MHz
µs
°C/W
* Pulsed: Pulse Duration = 300µs, duty cycle = 1.5%
Semelab Plc reserves the right to change test conditions, parameter limits and .